COMPARATIVE-STUDIES OF PHOTOLUMINESCENCE FROM N-DELTA-DOPING AND P-DELTA-DOPING WELLS IN GAAS

Luminescence spectra for n and p delta doping wells in GaAs are calcul ated. The stationary electron and hole states of the wells are obtaine d self-consistently by means of the multiband effective mass theory. T he overlap integrals of the electron and hole envelope functions are c rucial for the luminescence intensities. Those for light holes are lar ger than those for heavy holes, and those for p delta doping wells exc eed those for n delta doping wells by almost two orders of magnitude. This explains the experimental findings on luminescence from such well s.