ELECTRICAL CHARACTERISTICS OF METAL-RESISTIVE LAYER-SILICON (MRS) AVALANCHE DETECTORS

Authors
BISELLO D PACCAGNELLA A PANTANO D GOTRA Y MALAKHOV N JEJER V KUSHPIL V SADYGOV Z
Citation
D. Bisello et al., ELECTRICAL CHARACTERISTICS OF METAL-RESISTIVE LAYER-SILICON (MRS) AVALANCHE DETECTORS, Nuclear physics. B, 1995, pp. 397-401
Citations number
6
Categorie Soggetti
Physics, Nuclear
Journal title
Nuclear physics. B → ACNP
ISSN journal
05503213
Year of publication
1995
Supplement
44
Pages
397 - 401
Database
ISI
SICI code
0550-3213(1995):<397:ECOML(>2.0.ZU;2-9
Abstract
The main electrical characteristics at room temperature of Metal-Resis tive layer-Silicon avalanche detectors are presented for devices with a Ti/SiC/p-Si structure. Hysteresis of the I-V characteristics and tra nsients taking place during tests at fixed bias have been experimental ly studied, in correlation also with the effect of ionizing radiation. The device time response has been tested by using a Sr-90 source.