RADIATION-DAMAGE STUDIES OF N-SIDE SILICON MICROSTRIP DETECTORS

The RD20 Collaboration has carried out systematic radiation damage stu dies of prototype silicon microstrip tracking detectors for use in LHC experiments. Results are presented for dedicated n-side test-structur es showing the effect of irradiation with photons to 7Mrad and fast ne utrons to 8x10(13) n/cm(2). Both p-stop and MOS field-plate devices we re investigated, each having a range of strip geometries in order to d etermine optimal configurations for long-term viability and performanc e.