ANNEALING EFFECTS ON RESISTIVITY AND HALL-COEFFICIENT OF NEUTRON-IRRADIATED SILICON

High Temperature Annealing (HTA) treatment has been carried out on fas t-neutron irradiated silicon samples with temperatures up to 300C. Flu ences of irradiation up to 1x10(14)n/cm(2) were used. Before annealing , samples irradiated with fluences higher than 1x10(13)n/cm(2) suffere d the type conductivity inversion from n-type to p-type. The changes i n the resisitivity and Hall coefficient during each annealing step hav e been measured by Hall effect analysis. Results indicate the possible creation of accepters for low temperature annealing up to 150C and th e phosphorous release by E centres at annealing temperatures among 150 C and 200C. Heating samples up to 300C allows the recovering of the sa mple resistivity to its value before irradiation, with the peculiarity that bulks inverted to p-type after irradiation does not come back to n-type after annealing.