T. Kubicki et al., INVESTIGATIONS ON DAMAGE OF GAAS DETECTORS CAUSED BY NEUTRONS (PEAK ENERGY 1 MEV) AND CO-60 PHOTONS, Nuclear physics. B, 1995, pp. 528-530
In April 1994 we irradiated more than 60 GaAs detectors made from the
same wafer with different fluencies in the ISIS neutron source at the
Rutherford Appleton Laboratory. The detectors were produced in Aachen
from SI-GaAs from American Xtal Technology (AXT). All detectors remain
ed functional after irradiation with up to 1 x 10(15) n/cm(2). Even at
the highest radiation level the reverse current density of the detect
ors is below 50 nA/mm(2) at 200V bias voltage, only a factor of four h
igher than before irradiation. After 1 x 10(15) n/cm(2) the signal for
minimum ionising particles is a factor of two lower than before irrad
iation. No difference was seen beween detectors that were biased durin
g the exposure and those that were not. The detectors were operated at
room temperature during and after the exposure.