PHOTON RADIATION-DAMAGE IN HIGH-PURITY SILICON AND LEC SI GALLIUM-ARSENIDE DETECTORS

Authors
ALIETTI M CANALI C CASTALDINI A CAVALLINI A CHIOSSI C DELPAPA C FUOCHI G LANZIERI C NAVA F VANNI P
Citation
M. Alietti et al., PHOTON RADIATION-DAMAGE IN HIGH-PURITY SILICON AND LEC SI GALLIUM-ARSENIDE DETECTORS, Nuclear physics. B, 1995, pp. 531-535
Citations number
14
Categorie Soggetti
Physics, Nuclear
Journal title
Nuclear physics. B → ACNP
ISSN journal
05503213
Year of publication
1995
Supplement
44
Pages
531 - 535
Database
ISI
SICI code
0550-3213(1995):<531:PRIHSA>2.0.ZU;2-U
Abstract
Observations have been made of the behaviour of high resistivity silic on and semi-insulating gallium arsenide ionizing radiation detectors a fter exposure of up to 30 Mrad Co-60 photons. Results are presented on leakage current and deep level defects of the substrate material of p hoton damage devices. These findings have been related to the charge c ollection efficiency of the detectors.