ELECTRON-MOBILITY IN IN0.53GA0.47AS AS A FUNCTION OF CONCENTRATION AND TEMPERATURE

Authors
CHIN VWL OSOTCHAN T TANSLEY TL
Citation
Vwl. Chin et al., ELECTRON-MOBILITY IN IN0.53GA0.47AS AS A FUNCTION OF CONCENTRATION AND TEMPERATURE, Microelectronics, 26(7), 1995, pp. 653-657
Citations number
19
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Microelectronics → ACNP
ISSN journal
00262692
Volume
26
Issue
7
Year of publication
1995
Pages
653 - 657
Database
ISI
SICI code
0026-2692(1995)26:7<653:EIIAAF>2.0.ZU;2-Y
Abstract
The electron mobility in In0.53Ga0.47As as a function of temperature h as been calculated by the variational principle over a carrier concent ration range of 1 x 10(14) to 1 x 10(18) cm-(3) with compensation rati o as a parameter. We show that these results, which fit experimental d ata, can be well represented by a simple analytical function. We also give the tit coefficients for this expression as a function of tempera ture for various compensation ratios which may facilitate device model ling.