N-15 NUCLEAR-REACTION ANALYSIS OF H-1 ON [111]SI SURFACES

Citation
B. Hartmann et al., N-15 NUCLEAR-REACTION ANALYSIS OF H-1 ON [111]SI SURFACES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 103(4), 1995, pp. 494-501
Citations number
22
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
ISSN journal
0168583X
Volume
103
Issue
4
Year of publication
1995
Pages
494 - 501
Database
ISI
SICI code
0168-583X(1995)103:4<494:NNAOHO>2.0.ZU;2-3
Abstract
Polished [111] Si wafers, exposed to wet-chemical hydrogenation proced ures for monolayer (ML) coverage, were analyzed with the nuclear N-15- reaction technique in order to determine both areal concentration and vibrational properties of H-1. Initial multilayer coverages of up to 4 ML H equivalent were observed to desorb with ion or electron beam irr adiation until rather stable layers of about 1 ML H were reached. The quickly desorbing excess layers are attributed to physisorbed H-bearin g compounds. The remaining 1 ML constitutes chemisorbed H terminating dangling bonds of Si surface atoms. The observed Doppler width lies in between theoretical estimates for an ordered surface layer, perfectly aligned along the [111] direction, and a disordered, randomly oriente d one, so that a partial surface reconstruction cannot be excluded.