B. Hartmann et al., N-15 NUCLEAR-REACTION ANALYSIS OF H-1 ON [111]SI SURFACES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 103(4), 1995, pp. 494-501
Polished [111] Si wafers, exposed to wet-chemical hydrogenation proced
ures for monolayer (ML) coverage, were analyzed with the nuclear N-15-
reaction technique in order to determine both areal concentration and
vibrational properties of H-1. Initial multilayer coverages of up to 4
ML H equivalent were observed to desorb with ion or electron beam irr
adiation until rather stable layers of about 1 ML H were reached. The
quickly desorbing excess layers are attributed to physisorbed H-bearin
g compounds. The remaining 1 ML constitutes chemisorbed H terminating
dangling bonds of Si surface atoms. The observed Doppler width lies in
between theoretical estimates for an ordered surface layer, perfectly
aligned along the [111] direction, and a disordered, randomly oriente
d one, so that a partial surface reconstruction cannot be excluded.