CRYSTAL-GROWTH AND CHARACTERIZATION OF THE KONDO SEMIMETAL CENISN
Citation
G. Nakamoto et al., CRYSTAL-GROWTH AND CHARACTERIZATION OF THE KONDO SEMIMETAL CENISN, Journal of the Physical Society of Japan, 64(12), 1995, pp. 4834-4840
Categorie Soggetti
Physics
SICI code
0031-9015(1995)64:12<4834:CACOTK>2.0.ZU;2-Q
Abstract
Several single crystals of CeNiSn and CeNi0.95T0.05 Sn (T = Co and Cu)
were grown and characterized by metallographic examination, electron-
probe microanalysis and the measurements of resistivity, magnetoresist
ance, magnetic susceptibility and specific heat. Below 10 K, the semic
onductor-like behavior found for dirty or substituted crystals is supp
ressed with decreasing impurities. For a crystal purified by the solid
-state electrotransport technique, the resistivity along the orthorhom
bic a axis is metallic with the T-2 dependence, whereas those along th
e b and c axes increase below 3 K and pass through weak maxima at 0.8
K. These results suggest that the ground state of CeNiSn is not semico
nducting but semimetallic with a pseudogap which closes along the a ax
is.