CRYSTAL-GROWTH AND CHARACTERIZATION OF THE KONDO SEMIMETAL CENISN

Citation
G. Nakamoto et al., CRYSTAL-GROWTH AND CHARACTERIZATION OF THE KONDO SEMIMETAL CENISN, Journal of the Physical Society of Japan, 64(12), 1995, pp. 4834-4840
Citations number
17
Categorie Soggetti
Physics
ISSN journal
00319015
Volume
64
Issue
12
Year of publication
1995
Pages
4834 - 4840
Database
ISI
SICI code
0031-9015(1995)64:12<4834:CACOTK>2.0.ZU;2-Q
Abstract
Several single crystals of CeNiSn and CeNi0.95T0.05 Sn (T = Co and Cu) were grown and characterized by metallographic examination, electron- probe microanalysis and the measurements of resistivity, magnetoresist ance, magnetic susceptibility and specific heat. Below 10 K, the semic onductor-like behavior found for dirty or substituted crystals is supp ressed with decreasing impurities. For a crystal purified by the solid -state electrotransport technique, the resistivity along the orthorhom bic a axis is metallic with the T-2 dependence, whereas those along th e b and c axes increase below 3 K and pass through weak maxima at 0.8 K. These results suggest that the ground state of CeNiSn is not semico nducting but semimetallic with a pseudogap which closes along the a ax is.