ACCEPTOR IN QUANTUM-DOT IN CUBIC SEMICONDUCTORS

Energy levels and oscillator strengths for transitions between the low est states of an acceptor in a quantum dot of finite potential barrier in cubic semiconductors have been computed ill the effective-mass app roximation. Tile degeneracy of the valence band in cubic semiconductor s was taken into account in tile spherical approximation. Variational envelope functions consisted of a finite basis of exponentials, and ha d to satisfy appropriate boundary conditions to ensure tile hermiticit y of tile Hamiltonian matrix. In typical cubic semiconductors we have found enhanced values, by an order of magnitude, of oscillator strengt hs for tile acceptor optical transitions in the dots of radii comparab le to tile acceptor diameter.