FORMATION OF ORIENTED NITROGEN-DOPED CARBON-FILMS

Citation
Mb. Guseva et al., FORMATION OF ORIENTED NITROGEN-DOPED CARBON-FILMS, JETP letters, 62(9), 1995, pp. 715-718
Citations number
6
Categorie Soggetti
Physics
Journal title
ISSN journal
00213640
Volume
62
Issue
9
Year of publication
1995
Pages
715 - 718
Database
ISI
SICI code
0021-3640(1995)62:9<715:FOONC>2.0.ZU;2-5
Abstract
Oriented nitrogen-doped carbon films were obtained by the method of io n-assisted deposition of carbon in a nitrogen-containing glow discharg e. Auger electron spectroscopy showed that the nitrogen content in the films ranges from 3 to 36 at. % with substrate temperatures from - 20 degrees C to + 200 degrees C. Nitrogen and argon were introduced into the chamber in a definite ratio up to the pressure P = 10(-1) Pa. The atomic and electronic structures of the carbon films were investigate d by the methods of transmission electron microscopy, Auger electron s pectroscopy, and Raman spectroscopy. Single crystals with a hexagonal crystal lattice with a = 8.70 Angstrom were obtained at T = 200 degree s C. (C) 1995 American Institute of Physics.