Oriented nitrogen-doped carbon films were obtained by the method of io
n-assisted deposition of carbon in a nitrogen-containing glow discharg
e. Auger electron spectroscopy showed that the nitrogen content in the
films ranges from 3 to 36 at. % with substrate temperatures from - 20
degrees C to + 200 degrees C. Nitrogen and argon were introduced into
the chamber in a definite ratio up to the pressure P = 10(-1) Pa. The
atomic and electronic structures of the carbon films were investigate
d by the methods of transmission electron microscopy, Auger electron s
pectroscopy, and Raman spectroscopy. Single crystals with a hexagonal
crystal lattice with a = 8.70 Angstrom were obtained at T = 200 degree
s C. (C) 1995 American Institute of Physics.