CRYSTAL-GROWTH AND DIFFERENTIAL THERMAL-ANALYSIS OF AGGASE2

Citation
Sf. Zhu et al., CRYSTAL-GROWTH AND DIFFERENTIAL THERMAL-ANALYSIS OF AGGASE2, Crystal research and technology, 30(8), 1995, pp. 1165-1168
Citations number
10
Categorie Soggetti
Crystallography
ISSN journal
02321300
Volume
30
Issue
8
Year of publication
1995
Pages
1165 - 1168
Database
ISI
SICI code
0232-1300(1995)30:8<1165:CADTOA>2.0.ZU;2-5
Abstract
High quality AgGaSe2 single crystals with 20 mm in diameter and 55 mm in length have been grown by Bridgman technique. It is found that ther e is a second phase of Ag-rich Ga2Se3 (or named AgGa7Se11) in the AgGa Se2 crystal. It is concluded by discussions with the DTA results and t he phase diagram that single crystals grown from polycrystalline mater ials with stoichiometric composition must contain a second phase of Ag -rich Ga2Se3. This result is helpful for the heat treatment, in which what and how much is added and what temperature is chosen for the heat treatment, are very important.