NEAR-INFRARED ELECTROABSORPTION IN P(+) N(-)/N(+) GASB DIODES/

Liquid phase epitaxial growth of Te-compensated GaSb results in a very low doped n(-) GaSb epilayer (n approximate to 10(15) cm(-3)). Be+-im planted photodiodes produced from this material exhibit voltage breakd own values reaching 70 V. Generation-recombination lifetimes in the sp ace charge region around 10(-8) s have been deduced from these diode p hotoelectrical properties. The high value of the space charge width le ads to an efficient redshift due to the electroabsorption. The variati on of the absorption coefficient value is 1350 cm(-1) at 1.72 mu m for a variation of the electric field maximum of 1.2 x 10(5) V/cm. (C) 19 96 American Institute of Physics.