STUDIES ON COMPENSATED CU-CR-AL SPINEL OXIDE SEMICONDUCTORS

Authors
Citation
A. Roy et J. Ghose, STUDIES ON COMPENSATED CU-CR-AL SPINEL OXIDE SEMICONDUCTORS, Journal of solid state chemistry, 120(2), 1995, pp. 388-390
Citations number
5
Categorie Soggetti
Chemistry Inorganic & Nuclear","Chemistry Physical
ISSN journal
00224596
Volume
120
Issue
2
Year of publication
1995
Pages
388 - 390
Database
ISI
SICI code
0022-4596(1995)120:2<388:SOCCSO>2.0.ZU;2-A
Abstract
Electrical resistivity (rho) and thermoelectric power (alpha) measurem ents were carried out in air on CuCr2-xAlxO4(0.06 less than or equal t o x less than or equal to 0.10) spinel oxides in the temperature range 300-675 K. Carrier concentration (n), optical phonon frequency (gamma (o)), and mobility (mu)values have been calculated from resistivity an d thermoelectric power data. The results show that CuCr2-xAlxO4 spinel oxides are compensated semiconductors and the total compensation of t he hole carriers by electrons occur when 0.09 chromium ions are replac ed by aluminium ions. (C) 1995 Academic Press, Inc.