MULTIPLE-SCATTERING APPROACH TO THE S-F MODEL IN FERROMAGNETIC SEMICONDUCTORS ABOVE THE CURIE-TEMPERATURE

Citation
M. Takahashi et al., MULTIPLE-SCATTERING APPROACH TO THE S-F MODEL IN FERROMAGNETIC SEMICONDUCTORS ABOVE THE CURIE-TEMPERATURE, Physical review. B, Condensed matter, 52(23), 1995, pp. 16313-16316
Citations number
10
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
52
Issue
23
Year of publication
1995
Pages
16313 - 16316
Database
ISI
SICI code
0163-1829(1995)52:23<16313:MATTSM>2.0.ZU;2-5
Abstract
For the s-f model in ferromagnetic semiconductors, it is necessary to treat simultaneously multiple scattering on the same site and scatteri ng due to f spin correlation between different sites. In this paper, o ne-site multiple scattering is taken into account using a t-matrix for malism, and the exchange scattering via f spin correlation between dif ferent sites is treated using a two-spin correlation function and an a ppropriate decoupling scheme. The results show good agreement with tho se of the coherent potential approximation in the high-temperature lim it. The calculated energy of the bottom of the band is reasonable, eve n at the Curie temperature (T-c), for a wide range of IS/W, where W is the bandwidth of the conduction band and IS is the exchange interacti on energy.