TIME-RESOLVED PHOTOLUMINESCENCE OF PSEUDOMORPHIC SIGE QUANTUM-WELLS

We report low-temperature time-resolved photoluminescence experiments on a pseudomorphic SiGe quantum-well structure. Under the condition of optical absorption in the Si buffer layers, the decay time of the SiC e quantum-well luminescence is controlled by the capture of excitons a nd electron-hole droplets. From the onset of the SiGe luminescence, th e exciton lifetime in the investigated 59-Angstrom-wide Si0.72Ge0.28 q uantum wells is found to be about 100 ns.