The growth kinetics of thin liquid films, completely wetting a solid s
ubstrate, are studied. The film thickness is perturbed and reduced by
a short thermal pulse. Subsequently the time dependence of the growth
process was monitored by x-ray reflectivity measurements in the region
of total external reflection. The examined sample systems are CBrCl3
films on top of silicon, germanium, and glass wafers and CBrCl3 on gla
ss/gold and glass/silver substrates. The observed growth kinetics of t
he wetting layer are discussed in the framework of two models that wer
e adapted to the experimental conditions, particularly the finite temp
erature stability of the experimental setup. From the growth law l(t)
proportional to 1-exp(-t/tau)(n) fitted to the data, time constants ta
u and dynamic exponents n are determined. n depends on the dimension o
f the growth mechanism. Various systems with quite different substrate
-adsorbate interactions can be explained quantitatively within this mo
del.