GROWING WETTING FILMS - AN X-RAY STUDY

Citation
M. Strzelczyk et al., GROWING WETTING FILMS - AN X-RAY STUDY, Physical review. B, Condensed matter, 52(23), 1995, pp. 16869-16876
Citations number
44
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
52
Issue
23
Year of publication
1995
Pages
16869 - 16876
Database
ISI
SICI code
0163-1829(1995)52:23<16869:GWF-AX>2.0.ZU;2-8
Abstract
The growth kinetics of thin liquid films, completely wetting a solid s ubstrate, are studied. The film thickness is perturbed and reduced by a short thermal pulse. Subsequently the time dependence of the growth process was monitored by x-ray reflectivity measurements in the region of total external reflection. The examined sample systems are CBrCl3 films on top of silicon, germanium, and glass wafers and CBrCl3 on gla ss/gold and glass/silver substrates. The observed growth kinetics of t he wetting layer are discussed in the framework of two models that wer e adapted to the experimental conditions, particularly the finite temp erature stability of the experimental setup. From the growth law l(t) proportional to 1-exp(-t/tau)(n) fitted to the data, time constants ta u and dynamic exponents n are determined. n depends on the dimension o f the growth mechanism. Various systems with quite different substrate -adsorbate interactions can be explained quantitatively within this mo del.