LAPLACE TRANSFORM DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW INSIGHT INTO DEFECT MICROSCOPY

It is demonstrated that a resolution of deep level transient spectrosc opy (DLTS) can be improved using the Laplace transform method for the emission rate analysis. Considerable confidence in this approach was g ained through numerous tests carried out on two numerical algorithms u sed for the calculations as well as through measurements of a selectio n of well characterised point defects in various semiconductors. For e ach of these defects conventional DLTS gives broad featureless lines, whereas Laplace DLTS reveals a fine structure in the emission process producing the spectra.