AN ANALOG RANDOM-ACCESS MEMORY IN THE AVLSI-RA PROCESS FOR AN INTERPOLATING PAD CHAMBER

An analog memory for an interpolating pad chamber has been designed at Oak Ridge National Laboratory and fabricated by Harris Semiconductor in the AVLSI-RA CMOS process, The goal was to develop a rad-hard analo g pipeline that would deliver approximately 9-b performance, a readout settling time of 500 ns following read enable, an input and output dy namic range of +/- 2.25 V, a corrected rms pedestal of approximately 5 mV or less, and a power dissipation of less than 10 mW/channel. The p re- and post-radiation measurements to 5 MRad(1) are presented.