HIGH-EFFICIENCY GAINP GAAS HBT MMIC POWER-AMPLIFIER WITH UP TO 9 W OUTPUT POWER AT 10 GHZ/

Authors
RIEPE K LEIER H SEILER U MARTEN A SLEDZIK H
Citation
K. Riepe et al., HIGH-EFFICIENCY GAINP GAAS HBT MMIC POWER-AMPLIFIER WITH UP TO 9 W OUTPUT POWER AT 10 GHZ/, IEEE microwave and guided wave letters, 6(1), 1996, pp. 22-24
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE microwave and guided wave letters → ACNP
ISSN journal
10518207
Volume
6
Issue
1
Year of publication
1996
Pages
22 - 24
Database
ISI
SICI code
1051-8207(1996)6:1<22:HGGHMP>2.0.ZU;2-2
Abstract
Monolithic power amplifiers using adequately ballasted high-efficiency GaInP/GaAs heterojunction bipolar transistors (HBT's) have been desig ned, fabricated, and tested. A maximum output power of 9 W with a powe r-added efficiency (PAE) of 42% and peak power-added efficiencies of 4 5% have been achieved at 10 GHz under critical long pulse conditions ( pulse width = 100 mu s, duty cycle = 10%). To our knowledge these resu lts represent the best performance of any GaInP/GaAs HBT MMIC power am plifier considering efficiency, output power, operation frequency, and pulse conditions.