MODEL VERIFICATION FOR A HIGH-POWER-EFFICIENCY ALGAAS-GAAS HBT

Authors
DESHOURS F BERGEAULT E BERGHOFF G PINATEL C DUBONCHEVALLIER C
Citation
F. Deshours et al., MODEL VERIFICATION FOR A HIGH-POWER-EFFICIENCY ALGAAS-GAAS HBT, IEEE microwave and guided wave letters, 6(1), 1996, pp. 31-33
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE microwave and guided wave letters → ACNP
ISSN journal
10518207
Volume
6
Issue
1
Year of publication
1996
Pages
31 - 33
Database
ISI
SICI code
1051-8207(1996)6:1<31:MVFAHA>2.0.ZU;2-M
Abstract
Heterojunction bipolar transistors (HBT's) with 2700 mu m(2) of emitte r area are characterized for model verification using an active load-p ull measurement system. The simulation and measurement results (up to 26 dBm) are reported and compared in terms of output power level and p ower-added efficiency under variable operating conditions. These measu rements are performed with the aim of designing power amplifiers for m obile communications.