PHOTOABSORPTION AND PHOTORESPONSE BEHAVIORS OF SI-1-X GE-X/SI QUANTUM-WELLS/

Authors
YANG Y GONG DW HUANG XL SHI XH SHENG C WANG X
Citation
Y. Yang et al., PHOTOABSORPTION AND PHOTORESPONSE BEHAVIORS OF SI-1-X GE-X/SI QUANTUM-WELLS/, Solid state communications, 97(7), 1996, pp. 627-630
Citations number
8
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
97
Issue
7
Year of publication
1996
Pages
627 - 630
Database
ISI
SICI code
0038-1098(1996)97:7<627:PAPBOS>2.0.ZU;2-Y
Abstract
Photoabsorption and photoresponse of Si/Si1-xGex quantum wells are stu died by using 45 degrees unpolarized light field. Besides the free car rier absorption, the absorption peaks corresponding to both intersubba nd and intervalence band transitions are observed. We find that the in tervalence band transitions are Ge composition dependent, but the inte rsubband transitions are not sensitive to Ge composition.