PERFORMANCE, UNIFORMITY, AND YIELD OF 850-NM VCSELS DEPOSITED BY MOVPE

Vertical-cavity surface-emitting lasers (VCSEL's) emitting near 850 nm and fabricated with the metal-organic vapor phase epitaxy (MOVPE) epi taxial growth technique and a planar proton implant process have been demonstrated with excellent performance, uniformity, and yield across a 3-in wafer. Four thousand lasers were tested on a three-inch-diamete r wafer, with a yield of 99.8%. This translates into a yield of 94% fo r fully functional 34 x 1 arrays. The average threshold current, thres hold voltage, and dynamic resistance at 10 mA operating current were 3 .07 mA, 1.59 V, and 34 ohms, respectively. Uniformity of better than /-9% in threshold current, +/-1% in threshold voltage, and +/-1.5% in maximum optical output power across a 34-element array was demonstrate d.