DEMONSTRATION OF AN ION-IMPLANTED, WAVELENGTH-SHIFTED QUANTUM-WELL LASER

A technique for fabricating many different wavelength lasers on the sa me wafer has been developed. High energy ion implantation was used to selectively blue shift the emission wavelength of an InP-based quantum well laser structure. This structure was then processed into fully fu nctional broad-area lasers whose current threshold was unaffected by t he implantation process, indicating extremely high material quality af ter bandgap-shifting. This process has the potential for the integrati on of not only different wavelength lasers, but also other devices, su ch as waveguides, detectors, modulators, etc., on a single wafer.