TEMPORAL AND SPECTRAL CHARACTERISTICS OF BACK-ILLUMINATED INGAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS

Authors
HARGIS MC RALPH SE WOODALL J MCINTURFF D NEGRI AJ HAUGSJAA PO
Citation
Mc. Hargis et al., TEMPORAL AND SPECTRAL CHARACTERISTICS OF BACK-ILLUMINATED INGAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS, IEEE photonics technology letters, 8(1), 1996, pp. 110-112
Citations number
9
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
8
Issue
1
Year of publication
1996
Pages
110 - 112
Database
ISI
SICI code
1041-1135(1996)8:1<110:TASCOB>2.0.ZU;2-D
Abstract
We report dramatic differences in the impulse response and wavelength dependence of back versus top illuminated In0.53Ga0.47As planar metal- semiconductor-metal devices. Via direct measurement of transit-time li mited devices we identify the mechanisms involved and thereby allow th e optimum design of multi-Gbit, high responsivity back-illuminated dev ices. We show that responsivities greater than 0.8 A/W are achievable with >8 GHz bandwidth for 50-mu m-diameter devices.