NOVEL DESIGN TOPOLOGY FOR ULTRA-LOW POWER DOWN CONVERTERS WITH BROAD-BAND ON CHIP MATCHING NETWORK

A novel design topology for ultra low power receivers and down convert ers has been developed. Using this topology, a monolithic L-band down converter consisting of an input amplifier and a double balanced mixer has been implemented with a standard 0.7 mu m GaAs-MESFET process. Th e circuit has a single ended 50 Omega input and differential outputs o ffering totally more than 40 dB voltage conversion gain at 1 GHz and 3 0 dB at 2 GHz. It is supplied by a single lithium cell and has a dc po wer consumption of less than 2.0 mW at 2.7 V. Through a more exact mod eling of the parasitic capacitance of n-implanted resistors an improve d agreement between measurement and simulation was achieved, Finally, the determination of the noise figure at a high impedance output from a 50 Omega measurement is presented,