MBE GROWTH AND STUDY OF STRAIN-COMPENSATED ALZGA1-Z-XINXAS ALUGA1-U-VINVAS/INP QUANTUM-WELLS/

Authors
HILLMER H LOSCH R SCHLAPP W BURKHARD H
Citation
H. Hillmer et al., MBE GROWTH AND STUDY OF STRAIN-COMPENSATED ALZGA1-Z-XINXAS ALUGA1-U-VINVAS/INP QUANTUM-WELLS/, Physical review. B, Condensed matter, 52(24), 1995, pp. 17025-17027
Citations number
11
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
52
Issue
24
Year of publication
1995
Pages
17025 - 17027
Database
ISI
SICI code
0163-1829(1995)52:24<17025:MGASOS>2.0.ZU;2-Q
Abstract
A series of strain-compensated Al2Ga1-z-xInxAs/AluGa1-u-vInvAs/InP qua ntum-well samples have been grown by molecular-beam epitaxy and studie d by low-temperature photoluminescence. In the experiment, narrow phot oluminescence linewidths were obtained, mainly decreasing with growing well widths. The linewidths only reveal a weak increase with a rising number of wells. Our samples show high epitaxial quality and excellen t homogeneity in the lateral and growth direction.