EVALUATION OF EVAPORATED SPECIES FROM SILICON MELT SURFACE DURING SB-DOPED CZOCHRALSKI SILICON CRYSTAL-GROWTH

The composition of oxygen-bearing species evaporated from the Sb-doped silicon melts in a mass-production Czochralski (CZ) crystal growth sy stem was studied. Deposits in the growth chamber and in the exhaust ve nt were analyzed by X-ray diffraction (XRD) measurement. The results s howed that the composition of the deposits depended on the collection region, but was independent of the ambient pressure, The analysis show ed that deposits in the exhaust vent contained crystalline phases of S b(2)0(3) and metallic Sb, and those in the inner chamber wall consiste d of the crystalline phase of only metallic Sb, while an amorphous pha se of SiO was only detected in the exhaust vent, It can therefore be c oncluded that Sb oxide species evaporate from the melt to Ar ambient i n a Sb-doped CZ silicon crystal growth system. The site difference of nucleation and growth of evaporated species may have affected the depo sition composition in CZ crystal growth system.