EFFECTS OF DAMPING RESISTANCE ON THE MODULATION VOLTAGE OF LARGE-INDUCTANCE HIGH-T-C SUPERCONDUCTING QUANTUM INTERFERENCE DEVICES

Authors
SUZUKI D KURIKI S MATSUDA M
Citation
D. Suzuki et al., EFFECTS OF DAMPING RESISTANCE ON THE MODULATION VOLTAGE OF LARGE-INDUCTANCE HIGH-T-C SUPERCONDUCTING QUANTUM INTERFERENCE DEVICES, JPN J A P 2, 34(12B), 1995, pp. 1641-1643
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
34
Issue
12B
Year of publication
1995
Pages
1641 - 1643
Database
ISI
SICI code
Abstract
We have studied the effect of damping resistance which is added in par allel to the inductance of high-T-c de superconducting quantum interfe rence devices (SQUIDs). The SQUIDs were fabricated from YBa2Cu3O7-delt a (YBCO) films on (001) SrTiO3 bicrystal substrate. It was observed th at the reduced modulation voltage in large-inductance SQUIDs was impro ved by the damping resistance, while the modulation of the critical cu rrent was unchanged. A resonance structure existing in the I - V chara cteristic seemed to limit the effect of the resistance.