HIGH-RATE ANISOTROPIC ABLATION AND DEPOSITION OF POLYTETRAFLUOROETHYLENE USING SYNCHROTRON-RADIATION PROCESS

Both anisotropic ablation and thin him formation of polytetrafluoroeth ylene (PTFE) were successfully demonstrated using synchrotron radiatio n (SR) irradiation of PTFE, that is, the SR ablation process. Anisotro pic ablation by the SR irradiation was performed at an extremely high rate of 3500 mu m/min at a PTFE target temperature of 200 degrees C. M oreover, a PTFE thin film was formed at a high rate of 2.6 mu m/min us ing SR ablation of PTFE. The chemical structure of the deposited him w as similar to that of the PTFE target as determined from Fourier trans form infrared absorption spectroscopy (FT-IR) analysis.