M. Delabardonnie et al., CHARACTERIZATION METHOD FOR IONIZING-RADIATION DEGRADATION IN POWER MOSFETS, IEEE transactions on nuclear science, 42(6), 1995, pp. 1622-1627
An innovative method for power MOSFETs characterization is presented.
The radiation-induced degradation of structural parameters in the body
-drain junction is shown to be related to the total dose. These result
s provide a new way, through these new parameters, to qualify the radi
ation response of power MOSFETs.