A FAST, LOW-POWER CMOS AMPLIFIER ON SOI FOR SENSOR APPLICATIONS IN A RADIATION ENVIRONMENT OF UP TO 20MRAD(SI)

The design and measurements of a 0.5mW CMOS current mode amplifier in a SOI radiation hard technology are reported for a total dose of 20Mra d(Si). It is designed for the fast readout of particle detectors in hi gh energy physics experiments but could equally be applied to the read out of any capacitive sensor in a radiation environment. A preirradiat ion gain of 43.3mV/4fC, rise time of 17nS and Equivalent Noise Charge (ENC) of 1436e + 78e/pF (1.97nV(Hz)(-1/2)) is achieved. Measurements a re reported at 0, 10Mrad(Si) and 20Mrad(Si) with the evolution showing changes in peak voltage, rise time, parallel noise and series noise o f -23%, 26%, 23% and 60% respectively after 20Mrad(Si).