USE OF MOS STRUCTURES FOR THE INVESTIGATION OF LOW-DOSE-RATE EFFECTS IN BIPOLAR-TRANSISTORS

A possible physical mechanism for bipolar transistor low-dose-rate irr adiation response is discussed. This mechanism is described in terms o f shallow electron traps in oxide. The experimental results on positiv e charge build-up at low dose-rates and small electric field in oxide are presented. The use of MOS transistor in bipolar mode for investiga tion of surface peripheral recombination current in bipolar transistor and extraction of MOS structure physical parameters is described.