EFFECT OF RAPID THERMAL ANNEALING ON RADIATION HARDENING OF MOS DEVICES

Authors
FLAMENT O LERAY JL MARTIN F ORSIER E PELLOIE JL TRUCHE R DEVINE RAB
Citation
O. Flament et al., EFFECT OF RAPID THERMAL ANNEALING ON RADIATION HARDENING OF MOS DEVICES, IEEE transactions on nuclear science, 42(6), 1995, pp. 1667-1673
Citations number
13
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
42
Issue
6
Year of publication
1995
Part
1
Pages
1667 - 1673
Database
ISI
SICI code
0018-9499(1995)42:6<1667:EORTAO>2.0.ZU;2-E
Abstract
The influence of RTA (Rapid Thermal Anneal) treatment on MOS radiation hardness is demonstrated and compared with classical furnace treatmen t. In the case of the RTA, the oxide trapped charge is found to depend on: (i) the anneal temperature as expected. Data are in good agreemen t with a recently developed model of oxygen out-diffusion, (ii) the lo cation across the wafer with a radial dependence. Results could be rel ated to stress induced by thermal gradient.