EFFECT OF POST OXIDATION ANNEAL ON VUV RADIATION-HARDNESS OF THE SI SIO2 SYSTEM STUDIED BY POSITRON-ANNIHILATION SPECTROSCOPY/

The effect of a post oxidation anneal at 1000 degrees C in a N-2 ambie nt of the thermally grown Si/SiO2 system was investigated using vacuum ultraviolet irradiation for determining the generation of interface t raps of the Al metallized system in combination with positron annihila tion spectroscopy to characterize the structure of the oxide network. A correlation was found between the generation of interface traps and the S parameter of the positron trapping sites in the oxide close to t he Si. It appears likely that the positrons are trapped in the larger near-interfacial oxide network interstices. These interstices could ac t as scavengers for the metastable intermediate (atomic hydrogen or ex citons) involved in the generation of the interface traps.