COMPARISON AND IMPLICATIONS OF CHARGE COLLECTION MEASUREMENTS IN SILICON AND INGAAS IRRADIATED BY ENERGETIC PROTONS AND NEUTRONS

Authors
NORMAND E OBERG DL WERT JL MAJEWSKI PP WOFFINDEN GA SATOH S SASAKI K TVERSKOY MG MIROSHKIN VV GOLEMINOV N WENDER SA GAVRON A
Citation
E. Normand et al., COMPARISON AND IMPLICATIONS OF CHARGE COLLECTION MEASUREMENTS IN SILICON AND INGAAS IRRADIATED BY ENERGETIC PROTONS AND NEUTRONS, IEEE transactions on nuclear science, 42(6), 1995, pp. 1815-1822
Citations number
13
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
42
Issue
6
Year of publication
1995
Part
1
Pages
1815 - 1822
Database
ISI
SICI code
0018-9499(1995)42:6<1815:CAIOCC>2.0.ZU;2-K
Abstract
A variety of charge collection measurements by energetic protons and n eutrons have been measured and compared. These include deposition in: small silicon junctions, large volume American and Russian silicon sur face barrier detectors, and InGaAs photodiodes.