HEAVY-ION SEU IMMUNITY OF A GAAS COMPLEMENTARY HIGFET CIRCUIT FABRICATED ON A LOW-TEMPERATURE-GROWN BUFFER LAYER

We compare dynamic SEU characteristics of GaAs complementary HIGFET de vices fabricated on conventional semi-insulating substrates versus low temperature grown GaAs (LT GaAs) buffer layers. Heavy ion test result s on shift register and flip-flop devices from the same process lot de monstrate that the LT GaAs layer provides immunity from upsets, even a t an LET value of 90 MeV . cm(2)/mg. This result is also consistent wi th pulsed laser measurements performed on the same flip-flop circuits used in the ion test.