SIMULATION AIDED HARDENING OF N-CHANNEL POWER MOSFETS TO PREVENT SINGLE EVENT BURNOUT

Authors
DACHS C ROUBAUD F PALAU JM BRUGUIER G GASIOT J TASTET P CALVET MC CALVEL P
Citation
C. Dachs et al., SIMULATION AIDED HARDENING OF N-CHANNEL POWER MOSFETS TO PREVENT SINGLE EVENT BURNOUT, IEEE transactions on nuclear science, 42(6), 1995, pp. 1935-1939
Citations number
12
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
42
Issue
6
Year of publication
1995
Part
1
Pages
1935 - 1939
Database
ISI
SICI code
0018-9499(1995)42:6<1935:SAHONP>2.0.ZU;2-M
Abstract
2D MEDICI simulator is used to investigate hardening solutions to sing le-event burnout (SEE). SEE parametric dependencies such as carrier li fetime reduction, base enlargement, and emitter doping decrease have b een verified and a p(+) plug modification approach for SEE hardening o f power MOSFETs is validated with simulations on actual device structu res.