Sc. Moss et al., CORRELATION OF PICOSECOND LASER-INDUCED LATCHUP AND ENERGETIC PARTICLE-INDUCED LATCHUP IN CMOS TEST STRUCTURES, IEEE transactions on nuclear science, 42(6), 1995, pp. 1948-1956
We show that the thresholds for picosecond (psec) laser pulse-induced
latchup and energetic particle-induced latchup are well correlated ove
r a range of bulk CMOS test structures designed to be susceptible to l
atchup. The spatial length of the latchup-sensitive node of the test s
tructures covers a range of values that commonly occur in bulk CMOS de
vices. The accuracy of this correlation implies that laser-induced lat
chup can be used for hardness assurance and, under the proper conditio
ns, can be an accurate predictor of latchup threshold linear energy tr
ansfer (LET) for most bulk CMOS devices.