CHARGED-PARTICLE RADIATION EFFECTS ON BULK SILICON AND SIMOX SOI PHOTODIODES

We report the fabrication of the first n-on-p photodiodes on silicon-o n-insulator (SOI) substrates produced using the SIMOX (separation by i mplantation of oxygen) process. The effects of proton and alpha partic le radiation on the optical and electrical performance of these device s have been studied and the results compared to those from bulk Si dev ices fabricated and tested under identical conditions. In our experime nts, the SIMOX SOI photodiodes showed better optical stability and les s electrical degradation than their bulk Si counterparts following exp osure to charged particles. These results suggest that SOI substrates, in particular SIMOX structures, can potentially be used to fabricate photodetectors and image sensors with improved radiation hardness for space applications.