Rk. Lawrence et al., CHARGE TRAPPING VERSUS BURIED OXIDE THICKNESS FOR SIMOX STRUCTURES, IEEE transactions on nuclear science, 42(6), 1995, pp. 2114-2121
Radiation induced charge trapping versus Buried-Oxide (BOX) thickness
on various Separation-by-IMplantation-of-OXygen (SIMOX) buried oxides
has been determined. An inflection point has been observed in the volt
age shift versus buried oxide thickness relationship. As such, the rad
iation-induced voltage shifts for thin buried-oxides are greater than
what could be expected from a simple square-law relationship. However,
for irradiation applied fields higher than that of typical buried-oxi
de fringing fields the thickness relationship obeys a square-law. Thes
e results can be explained by the location and magnitude of the radiat
ion induced oxide charge centroid and its relationship to the BOX thic
kness. The location of the centroid for trapped positive charge is dep
endant on the radiation-induced hole mobility, which is related to SIM
OX processing, as well as on geometry and charge saturation.