St. Liu et Wc. Jenkins, THE EFFECT OF POWER-SUPPLY VOLTAGE SCALING ON THE TOTAL-DOSE RADIATION RESPONSE OF FULLY-DEPLETED SOI MOS-TRANSISTORS, IEEE transactions on nuclear science, 42(6), 1995, pp. 2122-2126
The radiation induced front channel threshold voltage shift (Delta V-t
1) of fully-depleted MOSFETs fabricated in SIMOX is investigated and a
nalyzed as a function of power supply voltage (V-DD) from 5.5 to 1.2 v
olts. This work shows that the expected improvement in front channel r
adiation hardness by reducing V-DD is not fully realized due to 1) a r
adiation induced off-set voltage at V-DD = 0 V, and 2) enhanced coupli
ng of the buried oxide charge to the front channel.