THE EFFECT OF POWER-SUPPLY VOLTAGE SCALING ON THE TOTAL-DOSE RADIATION RESPONSE OF FULLY-DEPLETED SOI MOS-TRANSISTORS

Authors
LIU ST JENKINS WC
Citation
St. Liu et Wc. Jenkins, THE EFFECT OF POWER-SUPPLY VOLTAGE SCALING ON THE TOTAL-DOSE RADIATION RESPONSE OF FULLY-DEPLETED SOI MOS-TRANSISTORS, IEEE transactions on nuclear science, 42(6), 1995, pp. 2122-2126
Citations number
6
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
42
Issue
6
Year of publication
1995
Part
1
Pages
2122 - 2126
Database
ISI
SICI code
0018-9499(1995)42:6<2122:TEOPVS>2.0.ZU;2-U
Abstract
The radiation induced front channel threshold voltage shift (Delta V-t 1) of fully-depleted MOSFETs fabricated in SIMOX is investigated and a nalyzed as a function of power supply voltage (V-DD) from 5.5 to 1.2 v olts. This work shows that the expected improvement in front channel r adiation hardness by reducing V-DD is not fully realized due to 1) a r adiation induced off-set voltage at V-DD = 0 V, and 2) enhanced coupli ng of the buried oxide charge to the front channel.