An analogy between the behavior of real gases and the behavior of clus
ters deposited on a surface has been established. A relation similar t
o the Van der Waals equation was used, with the variables correspondin
g to the deposition process. It was found that the critical parameters
and the Boyle temperature of the substrate define the conditions of a
particular nucleation and of the thin film growth mode and the condit
ions when one growth mode converts to the other. It has been shown tha
t the introduced analogy is in a good agreement with the recent experi
ments of nucleation and growth of thin films. The applicability of the
proposed analogy to the epitaxial growth and surface sputtering has b
een discussed.