EPITAXIALLY ORIENTED GROWTH OF DIAMOND ON SILICON BY HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION

Expitaxially oriented growth of diamond film on Si(001) was achieved u sing hot filament chemical vapor deposition. The epitaxial relationshi p between the film and the substrate was confirmed by the observation through scanning electron microscopy and high-resolution transmission electron microscopy (HRTEM) as follows: Dia(001)//Si(001) and Dia[110] //Si[110] with a misorientation angle of 9 degrees between Dia(001) an d Si(001). This reports the HRTEM observation of the largest area of t he diamond/Si interface (larger than 880 Angstrom). It demonstrates th at the intermediate beta-SiC layer is unnecessary for achieving diamon d epitaxy on Si. Discussion reveals that the value of the misorientati on angle between Dia(001) and Si(001) is not unique and should be cont rolled to deposit single-crystal diamond films on Si. (C) 1996 America n Institute of Physics.