Plasma-deposited carbon-based polymer films are examined for use as an
all-dry positive-tone photoresist for 193 nm lithography. These films
are designed to crosslink upon exposure to 193 nm radiation, enabling
selective silicon uptake via reaction of silylamine gas with hydroxyl
in the film. After oxygen plasma pattern transfer, features with reso
lution below 0.50 mu m have been obtained with a 0.35 numerical apertu
re projection System. (C) 1996 American Institute of Physics.