NEW NEAR-INFRARED DEFECT LUMINESCENCE IN GAN DOPED WITH VANADIUM BY ION-IMPLANTATION

Authors
KAUFMANN B DORNEN A HARLE V BOLAY H SCHOLZ F PENSL G
Citation
B. Kaufmann et al., NEW NEAR-INFRARED DEFECT LUMINESCENCE IN GAN DOPED WITH VANADIUM BY ION-IMPLANTATION, Applied physics letters, 68(2), 1996, pp. 203-204
Citations number
7
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
68
Issue
2
Year of publication
1996
Pages
203 - 204
Database
ISI
SICI code
0003-6951(1996)68:2<203:NNDLIG>2.0.ZU;2-O
Abstract
We report a new photoluminescence (PL) spectrum of wurzite-type GaN in tentionally doped with vanadium by ion implantation. A group of severa l broad intense near-infrared PL lines is observed at 820 meV. The who le PL spectrum can be observed up to room temperature. The samples wer e grown by low-pressure metalorganic vapor phase epitaxy on sapphire s ubstrate. After ion implantation the samples were annealed under growt h conditions at 920 degrees C. (C) 1996 American Institute of Physics.