DEPENDENCE OF AL0.48IN0.52AS SCHOTTKY DIODE PROPERTIES ON MOLECULAR-BEAM EPITAXIAL-GROWTH TEMPERATURE

We have observed a degradation in the epitaxial layer quality of AlInA s when it is grown by molecular beam epitaxy at a substrate temperatur e of about 400 degrees C compared to that for alloys grown at 300 and 500 degrees C. The barrier height and ideality factor of Ti- and Au-Al InAs Schottky diodes also exhibit large spatial variations and depende nce on growth temperatures. The observed phenomena can be explained by invoking a kinetic growth model or thermodynamic phase equilibria in the growing surface layer. (C) 1996 American Institute of Physics.