THE TEMPERATURE-DEPENDENCE OF THE CL-2 GAAS(110) SURFACE PRODUCT DISTRIBUTION/

The reaction of Cl-2 with GaAs(110) is studied with soft x-ray photoel ectron spectroscopy (SXPS). The temperature dependence of the surface product distribution, in the range of 300-650 K, is derived from SXPS core-level and valence-band spectra and compared to known gas-phase pr oduct distributions. It is found that both Ga and As chlorides are for med at room temperature. Following reaction at temperatures above simi lar to 400K, no Cl remains on the surface. Instead, for temperatures u p to similar to 600 K an As overlayer is formed, whereas reaction at s imilar to 650 K leads to the stoichiometric removal of Ga and As. Thes e findings indicate that there is a direct correlation between the sur face and gas-phase product distributions. (C) 1996 American Institute of Physics.