THE PREPARATION AND PROPERTIES OF PZT THIN-FILM BY SPUTTERING METHOD

The ferroelectric PZT thin films were prepared on Pt/Ti/SiO2/Si substr ate by RF sputtering method followed by the rapid thermal annealing. T he preparation of the Pt and Ti thin films as bottom electrode, and th eir influences on the PZT thin films were studied in details. The subs trate temperature during sputtering was room temperature; the rapid th ermal annealing temperature was 500 degrees C-750 degrees C and the an nealing time, was 30-70s. The influences of different preparation para meters on the structure and electric properties were studied with X-ra y diffraction technique and RT66A Standardized Ferroelectric Test Syst em. The electric properties of the prepared PZT thin film was: P-s=39 mu c/cm(2), P-r=9.3 mu c/cm(2), E(c)=28KV/mm, epsilon=300, p=10(9) Ome ga . cm.