S. Mohan et al., LOGIC DESIGN BASED ON NEGATIVE DIFFERENTIAL RESISTANCE CHARACTERISTICS OF QUANTUM ELECTRONIC DEVICES, IEE proceedings. Part G. Circuits, devices and systems, 140(6), 1993, pp. 383-391
New quantum electronic devices such as resonant tunnelling diodes and
transistors have negative differential resistance characteristics that
can be exploited to design novel high-speed circuits. The high intrin
sic switching speed of these devices, combined with the novel circuit
structures used to implement standard logic functions, leads to ultraf
ast computing circuits. The new circuit structures presented here prov
ide extremely compact implementations of functions such as carry gener
ation and addition. The most significant impact of these circuits on t
he field of logic design is the introduction of a totally new set of r
elative costs of various basic gates; reevaluation of the logic in the
light of these new cost functions leads to ultrafast and compact desi
gns.